We investigate the strain in various Ge-on-insulator(GeOI) micro-structures induced by three phase-change materials(PCMs)(Ge_2Sb_2Te_5, Sb_2Te_3, GeTe) deposite
Silicon-germanium(SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heav.y iron are measured using a real-time digital osci
The body current lowering effect of 130 nm partially depleted silicon-on-insulator(PDSOI) input/output(I/O)n-type metal-oxide-semiconductor field-effect transis
We investigate the above-threshold ionization of an atom in a combined infrared(IR) and extreme ultraviolet(XUV) two-color laser field and focus on the role of
Two measurement techniques are investigated to characterize photodetector linearity. A model for the two-tone and three-tone photodetector systems is developed
The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investi