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本文研究了制作 Ｊ Ｆ Ｅ Ｔ／ Ｓ Ｏ Ｓ（蓝宝石上外延硅结型场效应晶体管）的方法，采用扩散形成栅极 ｐ＋ ｎ 浅结以及复合注入的方法形成导电沟道，在不同的工艺条件下可得到增强型和耗尽型器件．通过 Ｃｏ６０源的 γ射线辐射实验发现这种器件具有良好的抗总剂量辐射性能，在 ５ Ｍ ｒａｄ（ Ｓｉ）剂量时阈值电压的变化小于 ０１ Ｖ，跨导以及漏电流的变化都很小
In this paper, a method of fabricating JF E T / S O S (sapphire epitaxial silicon junction field-effect transistor) is studied. Conductive channels are formed by diffusion forming a gate p + n shallow junction and a compound injection method. Under different process conditions Available under enhanced and depleted devices. The results show that this device has a good resistance to total dose radiation through the γ-ray irradiation experiment of Co60 source. The threshold voltage changes less than 0.1 V at 5 M rad (Si), and the transconductance and leakage current changes very little