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考虑到薄膜中的电子散射,发展与完善了现有的场发射F-N(Fowler-Nordheim)模型,理论研究了不同厚度的半导体薄膜对其场发射性能的影响。结果表明:薄膜厚度对场发射性能的影响是非常显著的,随着薄膜厚度的增加,将相继出现极差膜厚值与最佳膜厚值,理论计算很好地验证了已有的实验结果;并进一步理论分析了半导体薄膜场发射性能随膜厚变化行为的物理实质,其可能来源于有效隧穿势垒面积的改变及电流密度在薄膜中的散射衰减。
Taking into account the electron scattering in the film, the existing field emission F-N (Fowler-Nordheim) model is developed and perfected, and the influence of semiconductor films with different thicknesses on the field emission properties has been studied theoretically. The results show that the influence of film thickness on the field emission performance is very significant. With the increase of the film thickness, the film thickness and the film thickness value will appear one after another. The theoretical calculation shows that the experimental results ; And the physical essence of the field emission properties of the semiconductor thin film is also theoretically analyzed. It may be due to the change of the effective tunneling barrier area and the scattering attenuation of the current density in the thin film.