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采用 PECVD技术在 P型硅衬底上制备了 a- Si Ox∶ H/a- Si Oy∶ H多层薄膜 ,利用 AES和 TEM技术研究了这种薄膜微结构的退火行为 .结果表明 :a- Si Ox∶ H/a- Si Oy∶ H多层薄膜经退火处理形成 nc- Si/Si O2 多层量子点复合膜 ,膜层具有清晰完整的结构界面 .纳米硅嵌埋颗粒呈多晶结构 ,颗粒大小随退火温度升高而增大 .在一定的实验条件下 ,样品在 650℃下退火可形成尺寸大小合适的纳米硅颗粒 .初步分析了这种多层复合膜形成的机理
A-Si Ox:H / a-Si Oy:H multi-layer thin films were deposited on P-type silicon substrates by PECVD and the annealing behavior of the films was investigated by AES and TEM.The results showed that a- The Si x: H / a-Si Oy: H multi-layer thin film is annealed to form a multi-layer nc-Si / Si O2 quantum dot composite film with a clear and complete structural interface.The nano-silicon embedded particles have a polycrystalline structure, The particle size increases with the increase of annealing temperature.At the certain experimental conditions, the samples annealed at 650 ℃ to form nano-sized silicon particles with the proper size and size.The mechanism of the formation of this multilayer composite film