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This paper takes full advantages of the I-V transcon- ductance characteristics of metal-oxide semiconductor field effect transistor (MOSFET) operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconduc- tor (CMOS) logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient (TC) of 2.5×10-4 μA /℃ in the temperature range of -40 to 150 ℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad fre- quency. The PSRR is about -126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.
This paper takes full advantages of the IV transcon ductage characteristics of the metal-oxide semiconductor field effect transistor (MOSFET) operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. the SMIC 0.18 μm standard complementary metal-oxide semiconduc- tor (CMOS) logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient (TC) of 2.5 × 10-4 μA / 40 to 150 ° C at 1.5 V supply voltage, and also achieves a best PSRR over a broad fre quency. The PSRR is about -126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. operates stably at the supply voltage higher 1.2 V and has good process compatibility.