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评价了先进的 1 93nm抗蚀剂材料在全视场步进扫描系统中的光刻性能。对单层和双层抗蚀剂进行了性能和复杂性的比较。通过对最佳照明条件 (NA ,σ)的研究 ,提出了一种增大工艺窗口和减少疏、密图形偏差的方法。移相掩模的应用证明了1 93nm光刻技术对 1 0 0nm工艺段的拓展能力。
The lithography performance of the advanced 1 93 nm resist material in a full field step scanning system was evaluated. Comparison of performance and complexity of single-layer and double-layer resists. By studying the optimal illumination conditions (NA, σ), a method of increasing the process window and reducing the deviation of sparse and dense patterns was proposed. The application of phase-shift masks demonstrates the ability of 1 93 nm lithography to extend the 100 nm process segment.