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报道用射频加热化学汽相沉积法制备Ｓｉ／ＧｅＳｉ／Ｓｉ大断面单模脊形光波导中设计和工艺的进一步完善。ＧｅＳｉ合金层中Ｇｅ的含量ｘ要满足脊形光波导是单模、光波导的数值、孔径接近单模光纤值、脊高小于临界厚度值等，计算表明兼顾上述三项要求应取ｘ＝１～３％；脊的高与宽受大断面及单模的制约。Ｓｉ的晶体结构使脊的二个腐蚀侧壁是斜坡，为此起始脊宽取５～６μｍ为宜；腐蚀液、抛光液的选取要保证脊侧壁及波导端面的优良镜面。上述设计及工艺优化使光波导的实测性能显著提高，离散性降低。最佳传播损耗已降到０．３ｄＢ／ｃｍ。
It is reported that the design and process of Si / GeSi / Si single-mode single-mode ridge optical waveguide fabricated by RF thermal chemical vapor deposition are further improved. Ge content of GeSi alloy layer to meet the ridge waveguide optical waveguide is a single mode, the value of optical waveguide, the aperture close to the single-mode fiber value, the ridge height less than the critical thickness values calculated to take into account the above three requirements should be taken x = 1 ~ 3%; ridge height and width by the large cross-section and single-mode constraints. The crystal structure of Si makes the two corroded sidewalls of the ridge to be sloped, therefore, the starting ridge width is preferably 5 to 6 μm; the selection of the etching solution and the polishing liquid should ensure the excellent mirror surface of the ridge side wall and the waveguide end surface. The above design and process optimization make the measured performance of the optical waveguide significantly improved, discreteness reduced. The best propagation loss has dropped to 0.3dB / cm.