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磷化铟和与它有关的三元四元合金是目前认为作光电及微波器件比较有前途的材料.上述一些器件的制备工艺虽尚未成熟,但已发现材料的质量与光电及微波器件的性能有很大的影响,因此研究磷化铟体单晶的性质很重要.本文用深能级瞬态谱仪来研究磷化铟的深能级缺陷的性质.采用化学处理方法可以较方便地制备Au-InP的肖脱基势垒二极管,电学特性和稳定性较好,适合于深能级瞬态谱的测量.在测量时发现磷化铟体单晶中有可能存在缺陷团,除此之外还可以测量到浓度较低的另外两个深能级缺陷,它们的能级参数分别为(E_c-0.15eV,σ_n~A=1.2×10~(-18)cm~2)及(E_c-0.40eV,σ_∞~B=1.8×10~(-14)cm~2).
Indium phosphide and its related ternary quaternary alloys are currently considered as more promising optoelectronic and microwave devices.Prepare some of the above-mentioned device preparation process is not yet mature, but it has been found that the quality of materials and optoelectronic and microwave device performance Therefore, it is very important to study the properties of indium phosphide single crystals.In this paper, the deep level transient spectrometer is used to study the properties of deep level defects of indium phosphide.It can be easily prepared by chemical treatment The Au-InP Schottky barrier diode has good electrical characteristics and stability and is suitable for the measurement of deep level transient spectra. In addition, it is found that there may be defect clusters in the indium phosphide single crystal during the measurement (E_c-0.15eV, σ_n ~ A = 1.2 × 10 ~ (-18) cm ~ 2) and (E_c-0.15) were also measured in the other two deep- 0.40eV, σ_∞ ~ B = 1.8 × 10 ~ (-14) cm ~ 2).