X-band AlGaN/GaN HEMTs with high microwave power performance

来源 :中国科学：物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：liouyun

【摘要】

：

An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal charact

【作者】

：

PENG MingZeng ZHENG YingKui WE

【机构】

：

KeyLaboratoryofMicroelectronicsDevices&,IntegratedTechnology

【出处】

：

中国科学：物理学、力学、天文学英文版

【发表日期】

：

2011年3期

【关键词】

：

HEMT器件 ALGAN 高功率微波 X波段高电子迁移率晶体管性能饱和输出功率信号特性 GaN high-electron-mobility trans

【基金项目】

：

This work was supported by the Knowledge Innovation Program of Chinese Academy of Sciences.

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An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22

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X-band AlGaN/GaN HEMTs with high microwave power performance

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