Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

• 作 者: Sun Zhencui Cao Wentian WEI Qinqin WANG Shuyun Xue Chengshan Sun Haibo
• 机 构: Shandong Jiaotong University, Ji’nan 250023, China;Institute of Physics and Electronics, Shandong No
• 出 处: 稀有金属（英文版）
• 发表日期: 2005年2期
• 关键词: materials synthesis GaN films radio frequency (r.f.) magnetron sputtering Ga-dif

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.