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瑞萨(Renesas)公司宣布开发出一种具有低成本制造能力的极高性能晶体管技术,该技术用于45nm及45nm以下的微处理器和系统级芯片(SoC)器件。这种新技术改进了采用Renesas于2006年12月宣布的该公司所开发的一种专利先进混合结构技术的互补金属—绝缘体—半导体型晶体管的性能。与
Renesas Corp. announced the development of a very high-performance transistor technology with low-cost manufacturing capabilities for microprocessors and system-on-chip (SoC) devices at 45nm and below. This new technology improves the performance of a complementary metal-insulator-semiconductor transistor using a patented advanced hybrid structure technology developed by Renesas in December 2006. versus