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The minority carrier lifetime of as-gown germanium-doped Czochralski(GCZ)silicon wafers doped with germanium concentrations[Ge]=1016-1018 cm-3 is investigated in comparison with conventional CZ silicon samples.It is found that the lifetime distribution along the ingot changes with the variation of[Ge].There is a critical value of[Ge]=1016 cm-3 beyond which Ge can obviously influence the lifetime of as-grown ingots.This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors (TDs)and electrically active Ge-related complexes.The related formation mechanisms and distributions are also discussed.