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用超高真空电子束蒸发系统进行了硅的同质分子束外延.发现采用适当的表面化学处理方法,然后在超高真空中加热,可以在较低温度下(800—814℃)获得清洁和平整的有序表面.Si(100)和Si(111)的外延分别在520℃和714℃进行,外延膜的结构和电学特性良好.
Homogeneous molecular beam epitaxy of silicon was carried out using an ultrahigh vacuum electron beam evaporation system and was found to be cleanable at lower temperatures (800-814 ° C) using appropriate surface chemical treatment and then heating in ultra-high vacuum The epitaxial growth of Si (100) and Si (111) proceeds at 520 ℃ and 714 ℃, respectively. The structure and electrical properties of the epitaxial films are good.