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一、引言 制备新型高质量SOI材料的直接键合法——SDB技术(Silicon-Wafers Direct Bonding Technique)正受到人们的密切注视。如何获得制作器件所需要的硅膜,这是SDB技术步入实用化,应用于超大规模集成电路领域的关键。SDB中的减薄技术不同于常规的腐蚀和抛光工艺,它是将已键合好的厚度为350μm Si片大面积均匀减薄至数微米甚至更薄的Si膜,本工作利用KOH水溶液电化学腐蚀自停止效应,成功地获得了由外延(或扩散)层控制的表面平整光洁、厚度为1μm的大面积整片SOI硅膜。
I. INTRODUCTION The direct bonding method for preparing new high quality SOI materials - the Silicon-Wafers Direct Bonding Technique - is being watched closely. How to get the silicon film needed for the fabrication of devices is the key to SDB technology being put into practical use in the field of VLSI. SDB thinning technology is different from the conventional etching and polishing process, which is the bonding of a good thickness of 350μm Si thin uniform area to a few microns or even thinner Si film, this work using KOH aqueous solution of electrochemical Corrosion from the stop effect, successfully obtained by the epitaxial (or diffusion) layer controlled surface smooth flat, the thickness of 1μm large area of the whole slice of SOI silicon film.