The Bipolar Field-Effect Transistor:Ⅶ.The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gate

• 作 者: 揭斌斌 薩支唐
• 机 构: Peking University,University of Florida, Gainesville,Chinese Academy of Sciences, Foreign Member,
• 出 处: 半导体学报
• 发表日期: 2009年03期
• 关键词: transistor contacts bipolar drain operated inverter amplifier conductance analog

This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor(BiFET) under the unipolar(electron) current mode of operation,with bipolar(elec-tron and hole) charge distributions considered.The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base.The hole contacts on both edges of the thin pure base layer are grounded to give zero hole current.This 1-transistor analog-RF Basic Building Block nMOS amplifier circuit,operated in the unipolar current mode,complements the 1-transistor digital Basic Build Block CMOS voltage inverter circuit,operated in the bipolar-current mode just presented by us.

This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor (BiFET) under the unipolar (electron) current mode of operation, with bipolar (elec-tron and hole) charge distributions considered. The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base. Hole contact on both edges of the thin pure base layer are grounded to give zero hole current. This 1-transistor analog-RF Basic Building Block nMOS amplifier circuit, operated in the unipolar current mode, complements the 1-transistor digital Basic Build Block CMOS voltage inverter circuit, operated in the bipolar-current mode just presented by us .