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通过对室温下的本征氮化镓材料进行不同波长(360 nm～377 nm)的光照,分析了本征氮化镓中的持续光电导及其复合机制。实验的结果证明了两种持续光电导的特性:一种是快速的复合,而且分析表明关灯后这种复合机制导致的持续光电流下降幅度随着波长的增加而增加;另一种是速度较慢的复合,它的电流衰减幅度几乎不受波长的影响。基于这些现象,提出了一个可能的物理模型,认为第一种机制是由于导带电子被电子陷阱俘获而引起的,第二种是由于导带电子与空穴陷阱俘获的空穴之间的复合而造成的。
The continuous photoconductivity and its recombination mechanism in intrinsic gallium nitride were analyzed by illuminating the intrinsic gallium nitride at room temperature with different wavelengths (360 nm-377 nm). The experimental results show two characteristics of continuous photoconductivity: one is rapid recombination, and the analysis shows that the reduction of sustained photocurrent caused by this compound mechanism after turning off the light increases with the increase of wavelength; the other is the speed Slower recombination, its current decay rate is almost unaffected by the wavelength. Based on these phenomena, a possible physical model is proposed. The first mechanism is that the conduction band electrons are trapped by the electron traps, and the second one is due to the recombination between the conduction band electrons and holes trapped by hole traps And caused.