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用准分子激光在含氧气氛中对硅靶材料进行反应剥离，并让反应生成物沉积在单晶硅片表面上．用Ｘ射线光电子能谱、透射电镜分析，以及光致发光谱等方法对沉积的薄膜进行研究．结果显示，形成的薄膜是非晶态的二氧化硅组分，并且在其中含有少量的微米量级的多晶硅颗粒，在４４０ｎｍ附近的蓝光范围内有一光致发光带，初步认为它是由形成的二氧化硅中的氧空位缺陷引起的
The silicon target material is exfoliated by an excimer laser in an oxygen-containing atmosphere and the reaction product is deposited on the surface of the monocrystalline silicon wafer. The deposited films were investigated by X-ray photoelectron spectroscopy, transmission electron microscopy and photoluminescence spectroscopy. The results show that the film formed is an amorphous silica component and contains a small amount of polycrystalline silicon particles in the order of microns with a photoluminescence band in the blue region around 440 nm, which is presumed to be formed by the formation of bis Oxygen vacancy defects in silicon oxide