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在纯氮气气氛、衬底温度为20℃至370℃的条件下,分别在硅(100)和石英衬底上沉积氮化铝薄膜.原子力显微镜图片表明:在不同衬底温度制备的薄膜表面平滑,均方根粗糙度为2.2～13.2nm.X射线衍射图谱表明:可以在衬底温度为180°条件下沉积出具有c-轴择优取向的纤锌矿氮化铝薄膜,衬底温度的增加有利于薄膜结晶性的改善.由紫外-可见光透射谱计算得到薄膜折射率为1.80～1.85,膜厚约为1μm、光学能隙为6.1eV.
Aluminum nitride films were deposited on silicon (100) and quartz substrates, respectively, in a pure nitrogen atmosphere at a substrate temperature of 20 ° C. to 370 ° C. Atomic force microscopy images showed that the film surfaces prepared at different substrate temperatures were smooth , The root mean square roughness of 2.2 ~ 13.2nm.X-ray diffraction pattern shows that: can be deposited under the substrate temperature of 180 ° c-axis preferred orientation wurtzite aluminum nitride film, the substrate temperature increases Which is conducive to the improvement of the crystallinity of the film.The refractive index of the film calculated from UV-Vis transmission spectrum is 1.80 ~ 1.85, the film thickness is about 1μm, and the optical energy gap is 6.1eV.