论文部分内容阅读
Disordered regions(DR) produced by neutron irradiation are highly effective for the degradation of minority carrier lifetime in silicon. In this paper we analyze the properties of the DR in detail, calculate the occupancies of defect states and the bending height of the energy band by means of the effectively generalizing of Schokly-Read-Hall statistical recombination theory to the DR, and present the self-consistent formulas for calculating degradation of minority carrier lifetime in the region, including the influences of defect concentration, band bending height, quasi -Fermi level as well as excess carrier density on the minority carrier lifetime. Finally, we make a comparision between the calculation results from the disordered region model and the point defect model and experimental results with detailed discussions.
Disordered regions (DR) produced by neutron irradiation are highly effective for the degradation of minority carrier lifetime in silicon. In this paper we analyze the properties of the DR in detail, calculate the occupancies of defect states and the bending height of the energy band by means of the effectively generalizing of Schokly-Read-Hall statistical recombination theory to the DR, and present the self-consistent formulas for calculating degradation of minority carrier lifetime in the region, including the influences of defect concentration, band bending height, quasi-Fermi Finally, we make a comparision between the calculation results from the disordered region model and the point defect model and experimental results with detailed discussions.