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ＨＬ－１Ｍ装置采用硅化技术，大大改善了第一壁条件，提高了等离子体约束性能。对ＨＬ－１Ｍ装置的硅化涂层性能以及对等离子体杂质、热辐射和再循环进行了研究，并对装置抽气扁管内壁状态进行了分析描述。
The use of silicidation in the HL-1M device greatly improves the first-wall condition and improves the plasma confinement performance. Silicified coating performance of HL-1M device, as well as plasma impurity, heat radiation and recycling were studied. The state of the inner wall of suction flat tube of the device was analyzed and described.