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This paper presents theoretically calculated results of the quantum yield of silicon, which are in better agreement with experimental measurements than other published results. Considering the geometry of the interaction between the impact particle and the target particle on the base of classical view, we have developed a new expression for impact ionization. The distribution probability of carriers generated by photons has been given in this paper with fine results.
This paper presents theoretically calculated results of the quantum yield of silicon, which are in better agreement with experimental measurements than other published results. Considering the geometry of the interaction between the impact particle and the target particle on the base of classical view, we have developed a new expression for impact ionization. The distribution probability of carriers generated by photons has been given in this paper with fine results.