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本文报道了反应溅射法制备的a-Si:H/a-Ge:H超晶格结构特性.小角度X射线衍射测量和透射电子显微镜观察表明:超晶格层厚均匀、层间平行、界面处组分突变、周期性良好;喇曼散射、光吸收和红外透射表明:在超晶格中并不存在由于超晶格结构引起的界面结构无序,界面无H富集现象.
In this paper, the structural properties of a-Si: H / a-Ge: H superlattices prepared by reactive sputtering have been investigated. The results of X-ray diffraction and transmission electron microscopy show that the thickness of the superlattice is uniform, The composition of the interface changes abruptly and the periodicity is good. Raman scattering, light absorption and infrared transmission show that there is no disorder in interface structure and no H enrichment in the superlattice.