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自从1972年 IBM 公司采用自己设计的2 K 位MOS RAM 作为主存器件以来,其它半导体厂家已大量生产4K、16K 和64K 位的存储组件,但该公司却一直没有更换过它自己设计的这种组件。现在该公司宣布它已设计成18K、32K 和64K 位的 MOS RAM 组件。但是这些新宣布的组件的设计却是与众不同的。它的面积较大,速度较慢,功耗较大和采用多种电源。此外,它还采用冗余存储单元和内设的可编程序的 ROM 以去除坏的单元等。这个芯片采用投影光刻技术和2.5微米的设计规划。这些几乎已是同类工艺的尽头。此外,还采用双层金属工艺。MOS 晶体管采用金属栅,其第二层金属在聚酰亚胺(Polyimide)绝缘层上面作为列方向的联线。
Since 1972, when IBM adopted its own 2 Kbit MOS RAM as its main memory, other semiconductor manufacturers have mass-produced 4K, 16K and 64Kbit memory components, but the company has not changed its own design Component. Now the company announced it has designed 18K, 32K and 64K bit MOS RAM components. But the design of these newly announced components is different. It’s larger, slower, consumes more power and uses more power. In addition, it uses redundant memory cells and built-in programmable ROM to remove bad cells and more. This chip uses projection lithography and 2.5 micron design planning. These are almost the end of similar processes. In addition, the double metal process is used. The MOS transistor uses a metal gate, and the second layer of metal is used as a line in the column direction on a polyimide insulating layer.