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Littelfuse,Inc.,推出首款GEN2系列1200V碳化硅(SiC)肖特基二极管,以配合2017年欧洲电力转换与智能运动(PCIM)展的开幕。这种碳化硅二极管是通过Littelfuse与Monolith Semiconductor合作技术平台开发的产品系列中的首批产品。其他基于该技术平台的碳化硅产品(包括1200V碳化硅金氧半场效晶体管)正在筹备中,预计于不远的将来推出。GEN2碳化硅肖特基二极管的额定电压为1200V,工作电流从5A至10A
Littelfuse, Inc., introduces the first GEN2 Series 1200V silicon carbide (SiC) Schottky diodes to coincide with the opening of the European Power Conversion and Intelligent Sports (PCIM) 2017. This silicon carbide diode is the first of a family of products developed through the Littelfuse and Monolith Semiconductor Collaborative Technology platforms. Other silicon carbide products based on this technology platform (including the 1200V silicon carbide MOSFET) are under preparation and are expected to be launched in the near future. GEN2 silicon carbide Schottky diodes are rated for 1200V and operate from 5A to 10A