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现在,提出一种新技术,即把MOS 晶体管的阈值电压漂移分成界面态引起的漂移和氧化物俘获电荷引起的漂移。采用这种技术,对同一硅片上制作的电容器和MOS 晶体管的辐照响应进行比较,这种比较包括把n-沟和p-沟MOS 晶体管的阈值电压漂移与p-si 衬底和n-si 衬底电容器的反型点漂移关联起来。对于辐照响应变化范围很宽的样品,均考查了这种相关性。实验指出,n-沟MOS 晶体管的辐照效应能用n-si 衬底电容器来模拟。在同一硅片上制作的电容器与MOS 晶体管
Now, a new technique is proposed, which divides the threshold voltage drift of the MOS transistor into the states caused by the drift of the interface state and the drift caused by the oxide trapping charge. Using this technique, the radiation response of capacitors and MOS transistors fabricated on the same silicon wafer is compared. This comparison includes comparing the threshold voltage drift of n-channel and p-channel MOS transistors with the p-si substrate and n- si substrate capacitor inversion point drifting associated. This correlation was examined for a wide range of sample responses to radiation. Experiments show that the n-channel MOS transistor can be irradiated with n-Si substrate capacitor to simulate. Capacitors and MOS transistors fabricated on the same silicon