GaAs/G_(a1-x)Al_xAs量子阱中激子的结合能

• 作 者: 华文玉
• 机 构: 华东工学院应用物理系,
• 出 处: 南京理工大学学报(自然科学版)
• 发表日期: 1990年04期
• 关键词: 激子 a1-x)Al_xAs GaAs/G 量子阱结构 阱宽 有效质量近似 轻空穴 势阱 势垒层 深方

提出ρ和(Ze—Z_h)耦合试探波函数,计算了 GaAs/Ga_(I-x)Al_xAs量子阱中基态激子的结合能随阱宽和阱深的变化关系,并对所得结果进行了讨论。

The wave function of ρ and (Ze-Z_h) coupling was proposed, and the binding energies of ground state excitons in GaAs / Ga_ (I-x) Al_xAs quantum wells were calculated as a function of well width and well depth. The results were discussed.