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提出一种寿命控制新技术——氢离子辐照缺陷汲取铂局域寿命控制技术.所有样管首先进行能量为550keV,剂量为1×1013~5×1014cm-2的氢离子辐照;接着分别进行700~750℃,15~30min的退火,以完成铂在硅中的扩散和氢离子辐照缺陷对铂原子的汲取.随后,所有样管进行了深能级瞬态谱仪测试(DLTS),以得到缺陷汲取后样管中的铂浓度分布.最终,所有样品都得到了与氢离子辐照缺陷具有相似分布的局域铂浓度分布.同时,与现有的整体寿命控制技术和氢、氦离子辐照局域寿命控制技术相比,局域铂掺杂样管具有反向恢复时间小、反向恢复软度因子大和漏电流极小的优点.
A new technology of life control, which is based on the control of local lifetime of platinum ions, was proposed.All the samples were first irradiated with hydrogen ions with energy of 550keV and dosage of 1 × 1013 ~ 5 × 1014cm-2 respectively, Annealing was performed at 700-750 ℃ for 15-30 min to complete platinum diffusion in platinum and hydrogen ion implantation defects.Then, all the samples were tested by deep level transient spectroscopy (DLTS) To get the concentration distribution of platinum in the sample after the defect was drawn.At last, all the samples got the local platinum concentration distribution with similar distribution of hydrogen ion irradiation defects.At the same time, with the existing overall life control technology and hydrogen, Compared with the local lifetime control technology of helium ion irradiation, the local platinum doped sample tube has the advantages of small reverse recovery time, large reverse recovery softness factor and very small leakage current.