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1.绪言在测定硅之类半导体片内较浅的扩散层、离子注入层、外延层的 PN 结结深时,如果使深度方向扩展之后再进行观察,则能获得良好精度的测定。球面研磨法是实现此目的的一种方法。球面研磨与一般常用的平面角度研磨相比具有如下的优点:(1)从测定原理上来看,PN 结结深越浅,其深度方向的扩展率就越大;(2)用显微镜观察半导体表面的测定点相当方便,而且可以局部选择;(3)只要测定片子表面的尺寸就行了等等。而实际上随着 PN 结结深变浅,研磨面和半导体表面之间的夹角就随之而变大,使
1. INTRODUCTION In the measurement of the shallow diffusion layer, the ion implantation layer, and the epitaxial layer in a semiconductor wafer such as silicon, when the PN junction is deep, it is possible to obtain a measurement of good accuracy by further expanding the depth of the PN junction. Spherical grinding method is one way to accomplish this. Compared with the common plane angle grinding, the spherical grinding has the following advantages: (1) From the principle of measurement, the shallower the PN junction depth, the greater the expansion rate in the depth direction; (2) The surface of the semiconductor is observed with a microscope Of the measuring point is quite convenient, and can be selected locally; (3) as long as the determination of the size of the surface of the film on the line and so on. In fact, with the PN junction depth becomes shallow, the angle between the polished surface and the semiconductor surface becomes larger, so that