Novel ferroelectric tunnel junctions for nonvolatile memories

• 作 者: Shining Zhu
• 机 构: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University,
• 出 处: National Science Review
• 发表日期: 2014年02期
• 关键词: ferroelectric charges stored retain tunnel tablet scaling statistic longer ubiqu

Nonvolatile memories,which retain data without an external power supply,have become increasingly important as consumer electronic products,such as smart phones and tablet personal computers become popular.Today,FLASH memories,where information is stored as charges on the loating gate,are ubiquitous.However,the continuous scaling down of memory devices requires technology where information is no longer stored as electrical charges to avoid statistic luctuations in devices

Nonvolatile memories, which retain data without an external power supply, have become increasingly important as consumer electronic products, such as smart phones and tablet personal computers become popular.Today, FLASH memories, where information is stored as charges on the loating gate, are ubiquitous .However, the continuous scaling down of memory devices requires technology where information is no longer stored as electrical charges to avoid statistic luctuations in devices