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%Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growthusing C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth ofdiamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase thedensity of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is notbeneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increasethe density of diamond nuclei in the presence of H atoms.