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基于三维TCAD器件模拟,研究了带有n~+深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应.研究结果表明在重离子辐照时,n~+深阱会导致寄生的NPN双极型晶体管触发,显著增强NMOS间的电荷共享,其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2—4倍.进而分别研究了n阱接触和P阱接触对寄生NPN双极放大的影响,结果表明增大P阱接触的面积和减小n阱接触的距离将抑制NPN晶体管的放大作用,而增大n阱接触的面积将增强NPN的放大作用.
Based on the 3D TCAD device simulation, the charge sharing effect of 90 nm triple-well CMOS devices with n ~ + deep wells under heavy ion irradiation was studied. The results show that the charge sharing effect of n ~ + deep well Which leads to the parasitic NPN bipolar transistor triggering and significantly enhances the charge sharing between the NMOS and the amplification factor reaches 2-4 times of the amplification factor of the parasitic PNP transistor in the dual-well process. Then the effects of n-well contact and P-well contact on parasitic NPN bipolar amplification. The results show that increasing the area of P-well contact and reducing the distance of n-well contact will inhibit the amplification of NPN transistor, while increasing the area of n-well contact will enhance the amplification effect of NPN.