Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access m

• 作 者: 苏帅 鉴肖川 王芳 韩叶梅 田雨仙 王晓旸 张宏智 张楷亮
• 机 构: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communica
• 出 处: Chinese Physics B
• 发表日期: 2016年10期
• 关键词: resistive switching uniformity conduction reset sputtering insertion magnetron l

In this letter,the Ta/HfO_x/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO_x/BN bilayer device compared with that for the Ta/HfO_x/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfO_x layer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO_x/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfO_x device.

In this letter, the Ta / HfO_x / BN / TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO_x / BN bilayer device compared with that for the Ta / HfO_x / TiN structure.Furthermore, the reset current decreases with increasing BN thickness.The HfO_x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons into the TiN electrode. current conduction mechanism of low resistance state in the HfO_x / BN bilayer device is space-chargelimited current (SCLC), while it is Ohmic conduction in the HfO_x device.