论文部分内容阅读
提出一种复合沟道氟离子(F-)增强型AlGaN/GaN HEMT(Hybrid-channel enhancement-mode AlGaN/GaN HEMT,HCE-HEMT)新结构。该结构引入高、低浓度F-复合沟道,其中高浓度F-注入区位于沟道靠近源漏两端以调制阈值电压,获得增强型器件;低浓度F-区位于沟道中部以调制肖特基栅电极的正向开启电压,增加器件承受的栅电压摆幅,但它对其下方二维电子气的耗尽作用很弱。同时,高浓度区只占栅长的40%,减轻高浓度F-对沟道的影响,提升器件的电流能力。利用Sentaurus软件仿真,结果显示,与传统F-增强型AlGaN/GaN HEMT相比,HCE-HEMT载流能力提高了40.3%,比导通电阻下降了23.3%,同时反向耐压仅下降了5.3%。
A novel hybrid-channel enhancement-mode AlGaN / GaN HEMT (HCE-HEMT) structure is proposed. The structure introduces high and low concentration F-recombination channels, wherein the high-concentration F-implanted region is located at both ends of the channel close to the source and drain to modulate the threshold voltage to obtain an enhanced device; the low-concentration F-region is located in the middle of the channel to modulate the Shaw The forward turn-on voltage of the gate-based electrode increases the gate voltage swing the device withstands, but it has a weak depletion of the two-dimensional electron gas below it. At the same time, the high concentration area accounts for only 40% of the gate length, reducing the influence of the high concentration F- on the channel and improving the current capability of the device. The results of Sentaurus software simulation show that the current carrying capacity of HCE-HEMT is increased by 40.3% and the on-resistance is reduced by 23.3% compared with that of the conventional F-enhanced AlGaN / GaN HEMT, %.