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本文用Zn_3P_2源在闭管条件下研究了Zn在InP中的低温(520—700℃)扩散。比较了用“等温”扩散和“双温区”扩散技术扩散后,样品的电学参数。结果表明:“双温区”扩散法可得到表面光亮,无损伤的高浓度表面层。该法已用于InGaAsP/InP双异质结发光管的制备工艺中,并制得了光功率≥1mW,串联电阻2—3Ω的发光管。还讨论了Zn在InP中扩散时的行为,解释了低温(550℃)扩散过程中,等温扩散时出现的异常现象。
In this paper, Zn_3P_2 source was used to study the low temperature (520-700 ℃) diffusion of Zn in InP under closed-tube conditions. The electrical parameters of the samples were compared after they were diffused with “isothermal” diffusion and “dual temperature zone” diffusion. The results show that the “double temperature zone” diffusion method can obtain a bright surface without damage and high concentration surface layer. The method has been used in the preparation of InGaAsP / InP double heterostructure light-emitting tube, and produced light power ≥ 1mW, series resistance 2-3Ω LED. The behavior of Zn during diffusion in InP was also discussed, explaining the anomalous phenomena that occur during isothermal diffusion during low temperature (550 ° C) diffusion.