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利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa2Cu3O7-x薄膜的外延生长.在外延YBa2Cu3O7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO2作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织构取向,利用Raman光谱表征了其超导相的品质和取向特性,利用扫描电镜和原子力显微镜观测了薄膜的表面形貌和粗糙度.考察了不同厚度的CeO2层对YBa2Cu3O7-x生长和性质的影响.发现了YBa2Cu3O7-x薄膜的外延生长和性能对CeO2的不同厚度具有显著而独特依赖性,讨论了其可能的机理.
The epitaxial growth of YBa2Cu3O7-x thin films was grown on the un-textured metal substrate by a tilted substrate deposition method. Before epitaxial YBa2Cu3O7-x thin films, Yttria-stabilized cubic zirconia and CeO2 were sequentially deposited as buffer layers.The structures and biaxial texture orientations of these films were characterized by X-ray diffraction 2θ scanning, scanning, Ω scanning and pole figure analysis.The Raman spectra showed that The surface morphology and roughness of the films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of CeO2 layers with different thicknesses on the growth and properties of YBa2Cu3O7-x were investigated. It was found that the YBa2Cu3O7-x films The epitaxial growth and properties have significant and unique dependence on the different thickness of CeO2, and its possible mechanism is discussed.