论文部分内容阅读
通过脉冲激光沉积(PLD)法在SiO2基片上制备了不同含量的Mn掺杂ZnO薄膜.X射线衍射、X射线能谱、原子力显微镜与紫外-可见分光光度计测试结果表明:少量的Mn离子的掺杂并没有改变薄膜的结构,薄膜具有(103)面的择优取向;PLD法制备的ZnO薄膜的成分与靶材基本一致,实现了薄膜的同组分沉积;薄膜表面比较平坦,起伏度小于80nm,颗粒尺寸主要集中在25nm附近;但是Mn离子的掺杂改变了ZnO薄膜的禁带宽度,随Mn掺杂含量的增加,ZnO薄膜的禁带宽度增加;当薄膜中Mn含量从6%增加到12%时,薄膜对紫外强吸收区的光吸收能力也随之增加.
Different content Mn-doped ZnO thin films were prepared on SiO2 substrates by pulsed laser deposition (PLD) method.The results of X-ray diffraction, X-ray energy dispersive spectroscopy, atomic force microscopy and UV-visible spectrophotometer showed that a small amount of Mn ions The doping did not change the structure of the film. The film has the preferred orientation of (103) plane. The composition of the ZnO thin film prepared by PLD method is basically the same as that of the target. The same composition of the thin film is deposited. The surface of the thin film is flat, However, the doping of Mn ions changed the forbidden band width of ZnO thin films. With the increase of Mn doping content, the band gap of ZnO thin films increased. When the content of Mn in the thin films increased from 6% At 12%, the light absorption capacity of the film in the strong absorption region of UV also increases.