Effect of Sb-doping on the morphology and dielectric properties of chrysanthemum-like ZnO nanowire c

• 作 者: 闫军锋 游天桂 张志勇 田江晓 江妮 赵武
• 机 构: School of Information Science and Technology, Northwest University,
• 出 处: Chinese Physics B
• 发表日期: 2012年09期
• 关键词: dielectric doping saturation Chrysanthemum hexagonal hydrothermal microwave crys

Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree F d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ e increases with the increase of the Sb-doping concentration in a certain concentration range.

The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree F d is obviously different from that of pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tan δ e increases with the increase of the Sb-doping concentration in a certain concentration range.