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在量子阱半导体激光器结构中采用优化超晶格缓冲层来掩埋衬底缺陷，获得了性能优良的激光器。对超晶格缓冲层所具有的“量子阱陷阱效应”进行了理论分析。
In the quantum well semiconductor laser structure, an optimized superlattice buffer layer is used to cover the substrate defect, and a laser with excellent performance is obtained. Theoretical analysis of quantum well trap effect in superlattice buffer layer is made.