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由中国电子学会半导体与集成电路技术学会和电子材料学会主持召开的第七届全国化合物半导体材料和微波、光电器件学术年会,于1992年8月26日至30日在河北省北戴河召开。参加这次学术年会的代表来自全国40个单位,184人。机电部总工程师俞忠钰出席了大会,并就我国电于工业的发展作了重要讲话。会议录用论文176篇,其中特邀报告8篇,在大会上宣读了4篇。它们是:国家自然科学基金委员会许振嘉研究员的“金属-砷化镓研究”;北京大学秦国刚教授的“发可见光的多孔硅”;北京电子管厂苏里曼高级工程师的“InP异质结晶体管”和河北半导体研究所所长毕克允的“集中力量发展我国的砷化镓技术”。
The 7th National Symposium on Compound Materials and Microwave, Optoelectronic Devices was held in Beidaihe, Hebei Province from August 26 to 30, 1992, under the chairmanship of Institute of Semiconductor and Integrated Circuit Technology of the Chinese Institute of Electronics and Electronics Materials Association. The participants in this academic conference come from 40 units nationwide, 184 people. Yu Zhongyu, chief engineer of the Electrical and Mechanical Department attended the meeting and made an important speech on the development of China’s electric industry. There were 176 essays in the conference, among which eight were specially invited and 4 were read in the conference. They are: “metal-gallium arsenide” researcher by the National Natural Science Foundation of China; “porous silicon with visible light” by Professor Qin Guogang from Peking University; “InP Heterojunction Transistor” by Su Liman Senior Engineer of Beijing Electronic Tube Plant and Hebei Institute of semiconductor Bi Ke allow “to focus on the development of China’s gallium arsenide technology.”