INVESTIGATION OF PROBLEMS ABOUT THE LIGHT POWER OUTPUT OF GaAs-GaAlAs DH SURFACE LEDs

• 作 者: 黎锡强 孙炳玉
• 机 构: Shanghai Institute of Metallurgy Academia Sinica,Shanghai Institute of Metallurgy,Academia Sinica,
• 出 处: Journal of Electronics(China)
• 发表日期: 1985年04期
• 关键词: SURFACE degraded sputtering hasbeen coated attributed probably preparing driving

A modified conventional RF sputtering equipment is used in preparing the Al_2O_3 antireflection(AR)coating.An increase in the light output by 30—60% at a driving current of 200 mA for theGaAs-GaAlAs DH LEDs coated on the front faces with a AR coating thickness of about λ/4 hasbeen obtained.Under the same AR coating conditions a light output increase of less than 30% forthe degraded LEDs of the same type has been determined.It may probably be attributed to thedefects formed in the bulk of the Ga_(1-x)Al_xAs crystals caused by degradation of diodes which re-stricts light output increase.

A modified conventional RF sputtering equipment is used in preparing the Al 2 O 3 antireflection (AR) coating. Increase in the light output by 30-60% at a driving current of 200 mA for the GaAs-GaAlAs DH LEDs coated on the front faces with a AR Coating thickness of about λ / 4 hasbeen obtained. Un der the same AR coating conditions a light output increase of less than 30% forthe degraded LEDs of the same type has been determined. It may probably be attributed to thedefects formed in the bulk of the Ga_ (1-x) Al_xAs crystals caused by degradation of diodes which re-stricts light output increase.