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This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.
This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by rf sputtering. Polycrystalline ZnO: Al films with good adherence to the substrates having a (002) preferred orientation have The resulting transmittance with the range from 4.1 × 10-3to 5.3 × 104 Ωcm, carrier densities more than 2.6 × 1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2 / V / s for films. The average transmittance reached 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.