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采用超声雾化热解法在石英基底上制备了掺锑二氧化锡透明导电薄膜。采用X射线衍射检测薄膜的晶体结构,扫描电子显微镜观察薄膜的表面形貌,研究了不同基底温度和Sb掺杂量下薄膜的晶体优势生长面、晶粒形状的变化、可见光透过率和方块电阻。结果表明,薄膜的晶粒度在80～200 nm。当Sb摩尔比为1%、基底温度为540℃时,薄膜的方块电阻最小,约为16.91Ω/□。随着镀膜温度的上升,薄膜的优势生长面从(110)面逐渐向(211)面转移。当Sb掺杂比为1%时,薄膜的可见光透过率最高,当掺杂浓度增大后,薄膜的透过率出现下降。
Antimony-doped tin oxide transparent conductive thin films were prepared on quartz substrates by ultrasonic atomization pyrolysis. The crystal structure of the film was observed by X-ray diffraction. The surface morphology of the film was observed by scanning electron microscope. The dominant crystal growth surface and the shape of the crystal were observed under different substrate temperature and Sb doping. The visible light transmittance and square resistance. The results show that the grain size of the film is between 80 and 200 nm. When the Sb molar ratio is 1% and the substrate temperature is 540 ℃, the sheet resistance is the smallest, about 16.91Ω / □. With the increase of the coating temperature, the dominant growth surface of the film gradually transferred from the (110) plane to the (211) plane. When Sb doping ratio is 1%, the visible light transmittance of the film is the highest. When the doping concentration increases, the transmittance of the film decreases.