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测量了液相外延生长的GaAs-Al_xGa_(1-x)As n -N异质结 300K和 77K下的光伏响应的光谱分布,证明异质结界面上存在着较多的界面能级.能带形状在界面上有两个背对背的势垒.在禁带中离AlxGa_(1-x)As导带边 0.7-0.8eV处有一个类受主界面能级.在某些特定条件下,这种n-N异质结在光照和温度作用下可具有多态变化,它和界面态上电子的捕获和释放有关.
The spectral distributions of the photovoltaic responses at 300K and 77K in liquid-phase epitaxially grown GaAs-Al_xGa_ (1-x) Asn-N Heterostructure were measured to show that there are many interface states at the heterojunction interface. The shape has two back-to-back barriers at the interface. There is a class of acceptor interface energy levels at 0.7-0.8 eV from the conduction band of AlxGa 1-x As in the forbidden band. Under certain conditions, The nN heterojunction can have polymorphic changes under light and temperature, which is related to the capture and release of electrons on the interface.