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尽管小信号用的硅 MOS 场效应晶体管已经大量生产和大量使用,但功率用的硅MOS 场效应管除了二、三篇报告以外还没有别的报道。高频大功率 MOS 场效应管所以出现较晚的原因,一方面是由于出自 MOS 场效应管的工作原理而使管芯面积增大,也就是说因为 MOS 场效应管的电流通路是在表面极薄的沟道层,所以为了流过大电流,管芯的面积就要增大,以取得电流通过的面积。同时,作为高频功率用的场效应管沟道长度要短,沟道宽度也要显著地加宽,就工厂生产技术水平而言,能否稳定地成品率较高地
Although the small-signal silicon MOS field-effect transistor has been mass-produced and used in large quantities, the power MOS silicon field-effect transistor has not been reported except for two or three reports. High-frequency high-power MOS FET so late appear reason, on the one hand due to work from the principle of MOS FET and the die area increases, that is because MOS FET current path is the surface of the pole Thin channel layer, so in order to flow a large current, the die area will have to increase in order to obtain the current through the area. At the same time, FETs for high-frequency power have short channel lengths and significantly widened channel widths. In terms of the level of production technology in the factories, it is possible to stably produce a high yield