论文部分内容阅读
采用波长为1 064 nm的重复脉冲激光对单晶硅进行打孔实验,观测了小孔烧蚀深度以及表面孔径大小随脉冲个数的变化规律,并对激光辐照单晶硅的热力学过程进行了理论分析。研究结果表明:入射激光在穿过等离子体到达单晶硅的表面时,光斑尺寸会有所增大,小孔孔径会大于聚焦光束尺寸。小孔内的等离子体本身具有很高的温度,高温等离子体在膨胀过程中会通过热辐射和热传导等过程向小孔周围传递热量,这也会对小孔孔径起到一定的拓展作用。当脉冲个数低于6个时,孔深随入射脉冲个数的增加近似线性增长,而后开始缓慢增长直至保持不变,这主要是由激光等离子体屏蔽效应决定的。
Single-crystal silicon was perforated by repeated pulsed laser with a wavelength of 1 064 nm. The ablation depth of the small holes and the variation of surface pore size with the number of pulses were observed. The thermodynamic process of single-crystal silicon irradiated by laser was studied The theoretical analysis. The results show that when the incident laser passes through the plasma and reaches the surface of monocrystalline silicon, the spot size will increase and the aperture of the aperture will be larger than that of the focused beam. Small hole plasma itself has a very high temperature, high-temperature plasma in the expansion process by heat radiation and heat transfer process to transfer heat around the hole, which will play a small hole aperture expansion. When the number of pulses is less than 6, the hole depth increases linearly with the increase of the number of incident pulses and then slowly increases until it remains unchanged, which is mainly determined by the laser plasma shielding effect.