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目的评价半导体激光照射对牙龈卟啉单胞菌(P.gingivalis)的抗菌作用。方法研究于2016年3—5月在中国医科大学附属口腔医院中心实验室进行。应用半导体激光对接种在钛片表面的P.gingivalis进行照射,功率参数分别为1.5、2.0、3.0 W,照射时间分别为40 s和80 s,间断照射,照射后通过扫描电镜和平板菌落计数法观察细菌的形态和数量变化。结果通过激光照射,细菌数量大幅下降,细菌出现溶解、破裂,随着照射功率的增加和照射时间的延长,抗菌作用逐渐增强。结论半导体激光对P.gingivalis有很好的抗菌作用,增加照射功率和时间有助于抗菌效果增强。
Objective To evaluate the antibacterial effect of semiconductor laser irradiation on P. gingivalis. Methods The study was conducted at the Central Laboratory of Stomatology Hospital, China Medical University from March to May in 2016. Application of semiconductor laser on the surface of titanium sheeting P.gingivalis irradiation, power parameters were 1.5,2.0,3.0 W, irradiation time were 40 s and 80 s, intermittent irradiation, after irradiation by scanning electron microscopy and plate colony counting method Observation of bacterial morphology and quantity changes. Results By laser irradiation, the number of bacteria decreased significantly, and the bacteria dissolved and ruptured. With the increase of irradiation power and irradiation time, the antibacterial effect increased gradually. Conclusion The semiconductor laser has a good antibacterial effect on P. gingivalis. Increasing the irradiation power and time will help to enhance the antibacterial effect.