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暗场对准技术是利用光学暗场成像原理和微光真空光电探测技术，使投影光刻硅片上的标记获得大幅值、高信噪比的对准信号通过双池偏差优化软件，借助计算机进行采样控制和数据处理，从而获得很高的对准精度。对多种不同工艺硅片上的标记进行对准试验，精度达０．２μｍ（３σ）。该技术精度高，对硅片光刻工艺的适应性广，可用于大规模集成电路生产硅片光刻时的实际对准工作，使我国的投影光刻技术进入１μｍ特性线宽的实用阶段。
Dark field alignment technology is the use of optical dark field imaging principle and the low light vacuum photodetection technology, the projection lithography wafer on the mark to obtain large amplitude, high signal to noise ratio alignment signal through the double pool deviation optimization software, with the help of computer Sampling control and data processing, resulting in high alignment accuracy. Alignment tests were performed on a variety of different process silicon wafers with a resolution of 0.2 μm (3σ). The technique has high accuracy and wide adaptability to the lithography process of the silicon wafer, and can be used for the actual alignment work of the silicon wafer lithography in the production of large-scale integrated circuits, so that the projection lithography technology in our country can enter the utility phase with the line width of 1 μm.