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采用射频磁控溅射法制备了NbN,AlN单层膜及不同调制周期的AlN/NbN纳米结构多层膜,采用X射线衍射仪、小角度X射线反射仪和高分辨透射电子显微镜等对薄膜进行了表征.结果表明:单层膜AlN为六方结构,NbN为面心立方结构;AlN/NbN多层膜中AlN为六方结构,NbN为面心立方结构,界面处呈共格状态,其共格关系为c-NbN(111)面平行于h-AlN(0002)面,晶格错配度为0.13%.热力学计算表明:AlN/NbN多层膜中不论AlN层与NbN层的厚度如何,AlN层均不会形成亚稳的立方AlN,而是形成自身的平衡六方结构,与NbN形成异结构外延生长.
The films of NbN, AlN single layer and AlN / NbN nanostructured multilayer films with different modulation cycles were prepared by RF magnetron sputtering. The films were characterized by X-ray diffraction, low-angle X-ray reflectometry and high resolution transmission electron microscopy The results show that AlN is hexagonal in structure, NbN is face-centered cubic structure, AlN is hexagonal structure in AlN / NbN multilayers, face-centered cubic structure in NbN, coherent state at interface, The lattice mismatch degree is 0.13% for the c-NbN (111) plane parallel to the h-AlN (0002) plane. The thermodynamic calculations show that no matter what the thickness of AlN layer and NbN layer, AlN layer will not form a metastable cubic AlN, but the formation of its own balanced hexagonal structure, and NbN heterostructured epitaxial growth.