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本文研究了不同退火条件下,硅中氧沉淀缺陷类型的变化。实验结果表明,棒状缺陷和点状缺陷的数量比随低温成核退火时间的增加而减小;对于相同的成核时间,棒状缺陷和点状缺陷的比随成核温度增加开始上升,后来下降。在不同气氛和不同表面复盖情况下退火,发现在表面发生氧化时,缺陷尺寸随距洁净区距离的缩短而增加,而且缺陷尺寸的变化程度与氧化情况有关;在不发生氧化时,体内点状缺陷基本不变。
In this paper, we studied the variation of oxygen precipitation defects in silicon under different annealing conditions. The experimental results show that the number ratio of rod-like defects and spot-like defects decreases with the increase of annealing temperature at low temperature. For the same nucleation time, the ratio of rod-like defects and spot-like defects starts to increase with the increase of nucleation temperature and then decreases . When the surface is oxidized, the defect size increases with the distance from the clean area and the extent of the change of the defect size is related to the oxidation. In the absence of oxidation, the in vivo point The basic defects do not change.