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先进节点半导体的设计规则能在单位面积上制作更多晶体管,要求与外部更精细的互连。先进节点硅中的材料正从低k向超低k转变,这使器件更易受应力影响。为了满足先进节点硅的要求,基板材料朝接近硅的低热膨胀系数(CTE)方向变化,且有细线条性能的高杨氏模量。本文概述了当前从不同供应商得到的基板材料的开发状况。通过采用所谓的2.5D硅插入层技术,产业也有了对基板材料的革命性方法。但是,主要的不足在于其固有成本高。本文研究了有关的替代材料,如玻璃、陶瓷和有机基板材料,并比较了它们的利弊。
Advanced Node Semiconductor’s design rules make more transistors per unit area, requiring finer interconnections with the outside world. Materials in advanced node silicon are shifting from low k to ultralow k, making the device more susceptible to stress. In order to meet the requirements of advanced node silicon, the substrate material changes towards a low coefficient of thermal expansion (CTE) toward silicon and has a high Young’s modulus with fine line properties. This article outlines the current state of the art of substrate materials available from different suppliers. The industry also has a revolutionary approach to substrate materials through the use of so-called 2.5D silicon interposer technology. However, the main disadvantage is its inherent high cost. This article examines the relevant alternative materials, such as glass, ceramic and organic substrate materials, and compares their pros and cons.